Rapid and low temperature Cu particle sintering for power devices with mixing of MOD ink and reductive additives

Copper (Cu) particle sintering has received significant attention as an ideal interconnect technology for third generation semiconductors, addressing the challenges of low temperature bonding and high temperature operation. Despite its potential advantages, the requirement for critical sintering conditions has hindered the widespread adoption of Cu sintering in various applications. In this study, we present a novel Cu particle paste by mixing metal organic decomposition (MOD) inks and reductive additives to achieve efficient Cu sinter bonding. A comparative analysis was conducted based on three different pastes: the proposed paste with the hybrid system, a paste with reductive compounds, and a paste with MOD ink. The results demonstrated that the proposed paste achieved the highest shear strength of 37.91 MPa at 250 °C under N2 atmosphere. In contrast, the other two pastes achieved shear strengths of only 20.64 MPa and 5.61 MPa, respectively. To further understand the sintering mechanism of the mixing of MOD and reductive additives system in Cu paste, we conducted several tests, including shear strength tests, section morphology examinations and fracture surface observations. These investigations provided insights into the underlying mechanisms that contribute to the improved performance of the proposed paste. These results support the practical implementation of Cu sinter bonding in various applications, paving the way for advancements in third-generation semiconductor interconnect technologies. In conclusion, the research provides a promising solution to overcome the limitations associated with conventional Cu particle sintering methods. By using the hybrid system, we have successfully developed a Cu paste with superior bonding performance. This innovative approach has great potential for widespread adoption in the semiconductor industry, enabling more efficient and reliable interconnection technologies for next-generation electronic devices.