Design and Assessment of Dielectric Modulated Dual Metal Tunnel FET for Low Power IOT Applications

This study primarily aimed to investigate the electrostatic behaviour of the Dual Gate Tunnel Field Effect Transistor (DG-TFET). So as to tackle the primary obstacles endured by the MOSFET, a dual material double gate TFET structure is proposed, utilizing
$\text{HfO}_{2}$
as the gate dielectric, through the utilization of a TCAD simulator. The plot of the transfer characteristic of the proposed structure is created and multiple FOMs are extracted from the plot. The DC characteristics under consideration in this context are OFF current
$(\mathrm{I}_{\text{off}}), \mathrm{I}_{\text{on}}/\mathrm{I}_{\text{off}}$
ratio, ON current
$(\mathrm{I}_{\text{on}})$
, transconductance (gm), sub threshold swing (SS) and threshold voltage (V
th
). The energy diagrams in ON and OFF states are also illustrated. The investigation is conducted on high-K dielectrics, such as Hafnium Dioxide
$(\text{HfO}_{2})$
, Aluminium oxide
$(\text{Al}_{2}\mathrm{O}_{3})$
and Zirconium Dioxide
$(\text{ZrO}_{2})$
. This study aims to compare and analyze the performance of DC parameters across different gate dielectrics.