Compact Modeling of Power GaN Fin-JFETs I-V Characteristics using ASM-HEMT Model

In this paper, we analyse and precisely model the current-voltage (I-V) characteristics of Vertical GaN Fin-JFETs for operation temperatures of T= 25°C, 100°C and 200°C. To the authors' discernment, this marks the inaugural instance wherein a concise model for Gallium Nitride (GaN) Fin-Junction Field-Effect Transistors (Fin-JFETs) is introduced. We employ the ASM-HEMT model, an industry-standard, for the modelling of GaN Fin-JFETs. By modeling I-V behaviors at different temperatures the variations in mobility and threshold voltage with ambient temperatures is obtained. ASM-HEMT model formulations are found to be sufficient to accurately model GaN Fin-JFET device behavior.