A High-gain LNA for Ka-band radiometers in 130-nm BiCMOS

In this paper, a high-gain LNA for Ka-band radiometers is presented. The design incorporates improvements in the input stage structure to achieve a lower noise figure and enhanced isolation. Additionally, a well-designed inter-stage matching network and rear structure are employed to achieve improved gain performance. Manufactured in the 130-nm BiCMOS process. the presented LNA features 43.5 dB gain at 35 GHz with a 3 dB bandwidth of 4.5 GHz from 34.5 to 39 GHz. And power consumption of $61 mW$ at a voltage supply of $1.8 V$. The noise figure (NF) is 2.9 dB at 35 GHz.