P-type Dual Material Gate Si and Si(1-x)Gex TFETs: A Comparative Study for DC and Analog/RF Performance Evaluation

The work discusses the analyses of a Dual Material Gate TFET of p-Channel (p-DMG-TFET) with Si/SiGe Hetero-junction (HJ) to govern better improvements in radio frequency (RF) applications. The simulation outcome achieves an improved on-current to off-current ratio (I
on
/I
off
~10
⁹
), and minimum Sub-threshold Swing (19 mV/decade) of the proposed Si0.7Ge0.3 hetero TFET concerning Si used as channel. Based on their DC, Analog/RF properties, a thorough simulation analysis of Si0.7Ge0.3and Si channel devices is conducted. From this, a clear comparison has been made and better results for both digital and analog applications have been produced. Numerous digital and analog FOMs of proposed DMG-HJ-TFET, such as I
DS
, C
GG
, g
m
, g
ds
, f
T
and TGF are investigated and compared with Si channel shows better outcomes and is confirmed as a competent device for RF circuitry implementations.