Research of Magnetron Sputtering Thick TiN Film Production for Power GaN Electronics

Micro and nanoelectronics devices based on nitrides of third-group metals have become widespread in recent years and are still a relevant topic for research [1]. Such devices are characterized by good electrophysical characteristics, and the technology of their production provides high reproducibility of parameters. For combining devices in a chip and bringing contacts, it is necessary to apply a layer of metallization and form tracks (power lanes). The application of metal for the formation of metallization is an urgent problem.

I. Introduction

GaN transistors are characterized by high mobility of charge carriers and increased reliability, due to which they are widely used in power electronics to create batteries, power supplies and a wide range of other devices. The method of creating heterostructures based on this compound - molecular beam epitaxy is characterized by high reproducibility allows to grow high-quality layers of materials, however, it takes a large amount of time and resources. This method, however, is not applicable for forming metallization and creating ohmic contacts, which is a problem when creating power transistors in a single production run. Nevertheless, there are various methods for creating ohmic contacts, among which the magnetron sputtering method is the simplest and most reliable.[2]