Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 Substrate with a Graded AlGaN Buffer

In this paper, a recessed and field-plated gate AlGaN/AlN/GaN HEMT on β-Ga
2
O
3
substrate using a graded AlGaN buffer layer is presented. The DC performance of proposed graded AlGaN buffer HEMT is investigated and compared with a conventional AlGaN/GaN HEMT of having without graded buffer. The findings exhibited that the graded buffer HEMT performed significantly better than normal HEMT in terms of transconductance, pinched-off, subthreshold behavior, and DC characteristics.