High Efficiency and High Linearity GaN Power Amplifier with Harmonic Tuning and Fundamental Matching Networks

This paper outlines the design of a power amplifier (PA) that exhibits excellent efficiency and linearity. The design incorporates a novel harmonic tuning network (HTN) and a fundamental matching network (FMN). The HTN is implemented using two tuning lines for proper impedance mapping followed by separate harmonic traps for the second and third harmonics. Furthermore, the fundamental and harmonic impedances are properly mapped to the optimal values to achieve the desired efficiency and linearity. The design strategy is substantiated by developing a printed circuit board (PCB)-based PA utilizing a CREE CG2H40010F GaN device. The designed PA achieves a maximum power-added efficiency (PAE) of 77.8% and has a saturated output power of 39.7 dBm. Additionally, an improvement of approximately 3 dB is achieved in the third-order intercept (OIP3).