Ku-Band GaN High Power Amplifier

A high-power, broadband, high power added efficiency linear power-amplifier is designed using 0.25$\mu$ m GaN High Electron Mobility Transistor technology. The amplifier uses 3-stages with large periphery output devices to deliver an output power of 15W at Ku-band. The amplifier demonstrated up to 20 dB large signal gain over 18% bandwidth. The 4.6mm $\times$ 2mm MMIC chip demonstrated peak power added efficiency (PAE) of 30% and average PAE of 28% over the band.