Resistive Switching of RF Sputtered Tin-dioxide (SnO2) Based Memristor for Non-volatile Memory

Memristor taking advantages of the reversible resistive switching (RS) behavior to store information shows great potential in future computing-in-memory and thus has attracted great attention. In this study, we proposed a Cu/SnO
2
/ITO structure based memristor which shows a typical bipolar resistive switching behavior. The resistive switching performances and mechanisms of SnO
2
memristor were systematically studied. 20 cycles of obvious memory window and small operating voltage of 0.9 V render it suitable for non-volatile memory. Electrochemical metallization (ECM) mechanism is found to be suitable for understanding the current conduction which shows an obvious formation and rupture of conductive filament.