A Research Paper On The Electrical And Physical Characteristics Of FinFET Using LTspice

The Fin Field-Effect Transistor (FinFET) has emerged as a promising alternative to conventional CMOS (complementary metal-oxide-semiconductor) planar transistors in advanced semiconductor technology nodes. FinFET devices have significantly faster switching times and higher current density than planar CMOS technology. This paper presents a comprehensive study of the electrical and physical characteristics of FinFETs. The unique three-dimensional structure of FinFETs provides several advantages, including improved control over short-channel effects, reduced leakage currents, and enhanced scalability. The paper begins with an overview of the FinFET device architecture and its fabrication process. The electrical characteristics of FinFETs are investigated, focusing on key parameters such as threshold voltage (V
th
.), sub-threshold slope (S), drain-induced barrier lowering (DIBL), and drain current
$(\mathbf{I}_{\mathrm{d}})$
. Special attention is given to the on/off current ratio
$(\mathbf{I}_{\mathbf{on}}/\mathbf{I}_{\mathbf{off}})$
and the impact of these parameters on the device's switching efficiency and power consumption. The output I- V characteristics leads to significant production of channels by sub-threshold currents inherently. Effective mobility of charge carriers in the FinFET channel gives significant reviews on consideration of the coulomb, phonon and surface roughness scattering. The shape of the Fin layer in a FinFET can have a significant impact on its performance. The Fin layer refers to the three-dimensional fin structure that serves as the channel through which current flows in a FinFET. Optimizing the Fin layer shape is a critical aspect of FinFET design. It involves striking a balance between short-channel effects, gate control, series resistance, and contact resistance to achieve high-performance, low-power transistors suitable for advanced semiconductor technology nodes. Different FinFET based SRAM different circuits are developed and simulated by using open source L Tspice XVII Version.