Passive-Quenching of a Single-Photon Avalanche Photodetector Using a GeSeSbTe Germanium Selenium Compound Bidirectional Threshold Switching Memristor

Single photon avalanche diodes (SPAD) can be effectively quenched by using a large quench resistance connected in series. However, this method results in a longer recovery time. To address this issue, the works of other researchers have been made to replace conventional quenching resistance with Pt/ A12O3/ Ag memristors in SPADs. Research shows that this replacement reduces the avalanche pulse width to approximately 30ns, which is 10 times less than the traditional passive quenching method. Our study implemented a GeSeSbTe germanium selenium compound bidirectional threshold switching memristor, as the quenching resistance, which exhibited higher off state resistance and lower on state resistance than previous memristors. This implementation further decreased the avalanche pulse width to about 10ns, significantly improving the frequency response of the SPAD.