Impact of Dual Material Gate Design on Recessed Gate ß - Ga2O3 MOSFET for High Frequency Applications

The implementation of dual material gate electrode design on Ga
2
O
3
device with recessed gate configuration is proposed for radio frequency (RF) applications. The recessed gate configuration ensures reliable normally OFF mode operation, essential for fail-safe functionality. Additionally, the proposed dual material gate electrode concept enhances control over channel, improving both transport efficiency and transconductance. The research extensively investigates the analog characteristics and RF performance metrics of the proposed device, including transconductance, cut-off frequency, current, and power gain. A comprehensive comparison is conducted for the device so proposed and conventional recessed gate device. The results underscore the superiority of the proposed device, demonstrating promising outcomes, particularly in the context of RF applications.