Investigation on the Configuration of Devices in Mott Insulator-Based Memory Technologies

Semiconductor RAM and Flash technology, are renowned for their utilization in cutting-edge SRAMs and solid-state drives, unequivocally reign supreme in the vast realm of volatile and non-volatile memory markets. However, it is important to note that the current technology of these devices has certain limitations when it comes to downscaling. This particular constraint may potentially hinder its progress in the foreseeable future. Resistive random-access memory (ReRAM), Magnetic random-access memory (MRAM), and Phase-change random access memory (PCRAM) have emerged as captivating alternatives that hold promise in mitigating the limitations associated with Flash memory. In contrast to these other possibilities, ReRAMs stand out as an extremely attractive alternative due to their incredibly straightforward architecture and highly promising memory characteristics. Mott materials, renowned for their remarkable insulator to metal transition (IMT) capabilities in response to various stimuli such as temperature, tension, or electrical signals, have garnered significant attention in the realm of ReRAM research.