Impact of Geometrical and Process Design Parameters on the Performance of Schottky Barrier Reconfigurable Field Effect Transistor

In this study, the electrical properties of a Schottly Barrier Reconfigurable Field Effect Transistor (SBRFET) are thoroughly evaluated with the variation of important design parameters. The device proposed in this study operates in both n-type and p-type modes by exploiting electrical doping rather than additional physical doping. One of the critical design parameters is the gate work function, which significantly affects the charge density in the channel and subsequently alters the tunneling rate. The findings reveal that gate length variation has a negligible impact on the device's performance. The device achieved an on/off current ratio of $2 \times 10^{7}$ and a subthreshold swing of 87.5 mV/dec for n type operation, while for p-type operation, it achieved an on/off current ratio of $1.5 \times 10^{6}$ with a subthreshold swing of 95.7 mV/dec. The results of this study pave the way for developing high-speed, low-power digital circuits with reprogrammable logic.