A Dual-band Radio Frequency Power Amplifier Suitable for both Daily and Industrial Communication

Dual-band power amplifiers with high inter-band isolation have consistently been a focus of research in the current environment. Unregulated microwave transmitters can interfere with other signals, resulting in crosstalk and subsequent signal distortion, which affects signal transmission. This paper proposed the new circuit structure which can work in the GSM900 and GAA2840 frequency. The circuit adopts the coupling cavity structure, which has the function of reducing impedance mismatch and inhibiting the external signal. The design used the GaN transistor CGH40010F and implemented Rogers4350b board material. The test results show that the saturation output power is 39 dBm and 40 dBm in 900 MHz and 2.84 GHz band. The gain is about 8 dB. The power added Efficiency (PAE) is 65% and 69%. Compared with the traditional concurrent dual-band power amplifier, the amplifier structure significantly improves the matching performance, reduces the VSWR, and can well meet the development of modern wireless communication systems.