Temperature Dependent Analysis of ZnO QDs Photodetectors

Zinc Oxide (ZnO), a prominent II-VI group metal oxide semiconductor, has emerged as a potential contender for UV detection, especially under elevated temperature conditions. While Silicon (Si) has been traditionally explored, its efficacy diminishes at higher temperatures, highlighting the need for alternatives. ZnO, endowed with a wide band gap, radiation hardness, and piezoelectric properties, holds significant promise. Further, the quantum dot (QD) form of ZnO introduces enhanced spectrum selectivity due to its unique confinement properties. This research centers on the capabilities of ZnO QDs for high-temperature UV photodetection, spanning a temperature range from 303.15 K to 433.15 K. ZnO QDs have been thoroughly characterized and evaluated, providing important insights into their potential for UV photodetection under high temperature circumstances.