Simulation-Based Study of Gaussian-Doped Channel in Stacked Gate Oxide MOS Transistor

This paper examines the effect of Gaussian doping in the channel of a stacked gate oxide double-gate metal-oxide-semiconductor field-effect transistor (SGO-DG-MOSFET), called the Gaussian-doped channel SGO-DG-MOSFET (GDC-SGO-DG-MOSFET). Using the technology computer-aided design (TCAD) tool, the simulation results of GDC-SGO-DG-MOSFET are compared with the uniform-doped channel SGO-DG-MOSFET (UDC-SGO-DG-MOSFET). The GDC-SGO-DG-MOSFET shows a reduction in the subthreshold leakage current.