A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications

This paper presents a fully integrated Doherty power amplifier (PA) targeting V-band applications. With the implementation in the standard 100-nm GaN/SiC high-electron mobility transistor (HEMT) technology, the fabricated monolithic-microwave integrated circuit (MMIC) Doherty PA achieves a small-signal gain of 17.9 dB, a saturated output power $\left({\mathrm {P}}_{{\mathrm {sat}}}\right)$ of 27.8 dBm, and a peak power-added-efficiency (PAE) of 28.9% at 60 GHz, respectively. Characterized using a 250 MHz 200 MHz 64-quadrature-amplitude-modulation (QAM) single carrier modulated signal at 60 GHz, a corresponding error-vector-magnitude (EVM) of −25.4 dB was obtained while delivering an average output power of 23.4 dBm.