A W-Band Amplifier in FinFET Technology

This paper presents a W-band power amplifier (PA) operating between 68-82 GHz in 16 nm fin field effect transistor (FinFET) technology. The proposed PA is implemented using transformer coupling with device size and layout optimization. The 3-stage PA achieves a high power gain of 21.4 dB, beneficial from the transformer with shunt capacitance and series inductance matching technique. This PA provides 12.6 dBm saturated output power $(P_{sat})$ and 20% of power-added efficiency (PAE) under a low supply voltage of 0.8 V.