DPD Algorithm with Long-term Memory Effects Compensation for AlGaN/GaN HEMTs

This paper proposes a method for compensating long-term memory effects in AlGaN/GaN HEMTs power amplifiers using a two-dimensional local support interpolation technology with the Farrow structure. The proposed method is validated through linearization tests, and experimental results demonstrate an improvement of 7 dB in NMSE for E-TM3.1a TDD with long-term memory effects compensation. Additionally, the maximal EVM is reduced from 3.5% to 0.9% for E-TM2a FDD case and from 3.8% to 0.9% for E-TM2a FDD traffic variation case.