Performance Analysis of Normally-Off $\beta-(\text{AlxGa} 1-\mathrm{x})_{2} \mathrm{O}_{3} / \text{Ga}_{2} \mathrm{O}_{3}$ High Electron Mobility Transistor (HEMT) With p-GaN Gate and Addon AlGa2O3 Layer

A ground-breaking High Electron Mobility Transistor (HEMT) is introduced in this study, featuring a unique structure combining
$\boldsymbol{\beta}-(\mathbf{AlxGa}\mathbf{1}-\mathbf{x})\mathbf{2}\mathbf{O}\mathbf{3}$
and gallium oxide (Ga
2
O
3
), with a p-GaN gate and an additional AlGa
2
O
3
layer. This novel device, investigated for the first time, is analyzed using a TCAD device simulator calibrated with experimental data, providing valuable insights into its operation and performance. The proposed HEMT not only exhibits a normally-OFF mode but also showcases superior switching capabilities, improved amplification, reduced voltage drop, and increased current-handling capacity when compared to conventional Ga2O3-HEMTs of similar dimensions. The study delves into the impact of individual device parameters on the electrical characteristics of this innovative device. A comprehensive simulation model is constructed to analyze these parameters and estimate the threshold voltage for normally-OFF operation. Comparative analysis with various Ga2O3 HEMTs and GaN HEMTs consistently demonstrates the superiority of the proposed model.