Performance Analysis of GaAs, InAs and Silicon Nanowire by Using Modal Analysis

This paper presents a modal analysis of GaAs, InAs and silicon nanowire to check their effective mode index. If the material refractive index of core is so high then light wave scattered, so don’t get the mode properly with the change of core radius. For medium refractive index of core, the electric and magnetic field of different x, y and z component intensity distribution of light wave gets properly. Here effective index curves measure the mode of those three materials with the help of increase of core radius. A modal analysis approach using finite Element methodology (FEM) employing a full-vectorial H-field formulation that has been customized to verify the single-mode operation.