HBT Modeling and X-Band Differential LNA Design with 0.25 µm SiGe-C BiCMOS Process

This study presents the generation of a model based on measurement-aided numerical calculations for HBT (Heterojunction Bipolar Transistor) with VBIC parameter set. Various HBT structures with several different sizes are fabricated in an in-house developed SiGe BiCMOS process. The validity of the constructed model is verified with the measurement results. An RF Low Noise Amplifier is also implemented with HBT VBIC based model. This work explains all the steps of HBT transistor modeling. The VBIC model based HBT performance is validated in an implemented RF Low Noise Amplifier.