Analysis and Implementation of Graphene Nanoribbon Field Effect Transistor based SRAM Cell

Graphene Nanoribbon Field Effect Transistor (GNRFET) these transistors can be considered as one of the alternatives for the silicon elements in the recent and future trends of designing integrated circuits. This paper introduces the design, analysis and implementation of a conventional 6T SRAM Cell for Graphene Nano Ribbon Field Effect Transistor (GNRFET) based transistor cell as well as CMOS based transistor cell for the 32nm Technology node. The Circuit analysis and simulation is done using Synopsys HSPICE simulator at the 32nm technology. The SNM is calculated for the different cell ratios on which GNRFET shows the notable performance compared to CMOS based technology. The better valued SNM is choosen for the future implementation.