Effect of Substrate Resistivity on Spiral Inductor in Radio Frequency Bands

SOI(Silicon-on-Insulator)technology, considering its development and benefits compared to silicon Bulk technology, is considered very promising to meet the increased demands of the wireless telecommunications market in terms of low cost, CMOS compatibility, low substrate losses, and low power consumption system-on-chip manufacturing capability. Thus, best-in-class Si-based substrates, additionally high performance RF components are in high demand. The porous silicon (PSi) substrate holds great promise for emerging wireless communication integrated circuits demanding the elimination significant attenuation at high frequencies in the bulk silicon substrate. It is within this context that, the work aims to demonstrate the applicability of the porous silicon substrate for the design of RF circuits operating in radio frequency band. An inductor is integrated, and a comparison between the performances of this RF band inductor in terms of S-parameters (insertion losses) and of quality factor on the substrates studied is developed.