Electromigration of Backside Power Delivery Networks for PPA-Reliability Tradeoffs at N2 Node

Electromigartion (EM) reliability of backside power delivery network (BSPDN) using three kinds of techniques (BPR, TSVM and BSC) is comprehensively investigated by proposed electro-thermal-stress fully coupled EM simulation method. The physical behaviors of metal atom migration, vacancy generation and void nucleation are reproduced to offer the understanding of microscopic void evolutions. The obtained position of EM failure and resistance degradation show a well agreement with the experiments in different metals. By studying the time to failure (TTF) of various BSPDNs connected to power lines (GND, VDD) with alternative metal materials (W, Ru, Mo), valuable insights can be gained to mitigate potential failure risks and enhance the EM reliability of advanced interconnects technology. The tradeoffs of power-performance-area-reliability (PPAR) are predicted in different BSPDNs at N2 node.