6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts

We report on the development of CMOS compatible SiN/AlN/GaN MIS-HEMT process on 200mm Si substrates for Ka-band power amplification. The combination of soft gate process, gate design with reduced electric field, in- situ SiN gate dielectric, low temperature ohmic contacts, low substrate RF losses and GaN:C back-barrier leads to Ft/F
MAX
of 81/173GHz for 2x50μm devices with L
G
=150nm. At 28 GHz, the device shows performance similar to other GaN/Si technologies at V
DD
=10V and competitive performance with GaN/SiC at V
DD
=20V with PAE=41% and P
SAT
= 6.6W/mm.