Pulsed X-rays Induced Single Event Effects in Si, SiC and GaN Technologies

Alternative SEE test methods are increasingly sought after. This work is a contribution to the use of a pulsed X-rays beam. The main objective was to evaluate the parameters leading to the correlation between pulsed X-rays, broadbeam heavy ions, and laser pulses on wide bandgap component technologies (SiC and GaN). Indeed, these technologies can present preparation issues and pulsed X-rays can be an interesting solution to overcome them. Comparisons were also performed to study non-destructive and destructive events with different levels of package thinning of the devices allowing to rule on the capacity of pulsed X-rays to cross these packages.