Analysis of Efficiency and Utilization with SRAM Dosimetry for Single-Event Effect Evaluation under Irradiation

For the first time, we have proposed a quantitative correction factor $(Q_{\text {crit}\_\text{eff}})$ ratio model as a way to select SRAMs for reference dosimeters. In order to improve the accuracy of $(Q_{\text {crit}\_\text{eff}})$ model, reverse engineer-level SRAM physical structure analysis was used to precisely extract device parameters such as cell active area and cell MOSFETs’ array in the cell region, well tap distance, and well depth. The quantitative correction factor $(Q_{\text {crit}\_\text{eff}})$ ratio was calculated in consideration of the geometrical effect with the device parameters for SRAM sensitivity of single event upset (SEU). As a result, using the $(Q_{\text {crit}\_\text{eff}})$ structures of SRAM, FIT ratio provides higher accurate than that of conventional critical charge ratio. Furthermore, for the selected SRAM, SEU dependency on proton energy and device package characteristic is analyzed which shows SEU generation at 0-MeV and proton direct ionization (PDI) effect for reference data when using our SRAM dosimeter under the condition of below 100-MeV. Finally, efficiency of using reference SRAM dosimeter for single event effect (SEE) evaluation is verified at test for radiation effect of SiC power diodes by providing fluence of proton for single event burnout (SEB) evaluation.