Fully Modular, Dynamic SiC and GaN Testbench with Automated Temperature and Gate-Voltage Characterization

In modern power electronics, wide bandgap semiconductors have an ever-increasing importance for highly efficient, power-dense systems. The extraction of the switching losses is of pristine importance for the modulation of the losses of the final converter and its thermal layout. While there exist a variety of automated test benches for Silicon these are not suitable for the high slew rates present in wide bandgap. In this paper, a fully parametrized and automated double pulse test setup compatible with all discrete packages of Gallium Nitride and Silicon Carbide devices is presented. The setup enables fully automated and fast parameter sweeps in dependence on drain-source current, drain-source, and variable gate-source voltage as well as temperature while maintaining an application-oriented layout of the commutation cell.