SH Waves in a Bi-Layered Structure Composed by Viscoelastic Material and Piezoelectric Semiconductor

The dispersion and attenuation characteristics of SH wave propagation in a bi-layered structure composed by viscoelastic material and piezoelectric semiconductor structures are investigated in this study. The analytical solutions of the viscoelastic layer and piezoelectric semiconductor layer are obtained by direct solution method, and the solution of complex domain is solved by minimum modulus approximation method. After the analysis, a biasing electric field is applied along the
$x_{2}$
direction to slow down the attenuation of the SH wave within the bi-layered structure. When the value of
$kh$
is small, the SH wave within the bi-layered structure exhibits an amplification phenomenon. While maintaining the constant electric field, increasing the steady state carrier concentration has a more remarkable effect on SH wave amplification. These conclusions can provide a theoretical basis for expanding the application of ultrasonic nondestructive testing in viscoelastic materials.