An Improved Single-Temperature Trim Technique for 1st Order-Compensated Bandgap References

An improved single temperature trim technique for voltage references is presented. A detailed analysis of the principle of the proposed method is provided, and a comparison of its performance is made with respect to standard single and two-temperature trim methods. The proposed technique is applied to a Kuijk bandgap voltage reference simulated in a standard 180nm CMOS process. Simulation results show that the post-trim temperature coefficient (TC) obtained by the proposed method is better than the existing single-temperature trim method and is comparable to that obtained from a standard two-temperature trim.