Enhanced Performance in Deep-Ultraviolet Light-Emitting Diodes with an Undoped AlInGaN Graded Hole Reservoir Layer

To alleviate the problem of low hole injection efficiency in deep ultraviolet light-emitting diodes (DUV LED), an undoped AlInGaN graded hole reservoir layer is designed in this paper to improve the hole injection efficiency. According to the simulation results, the adoption of this structure significantly improves the output power and internal quantum efficiency (IQE) of the LED, which provides insights into the development of high-performance DUV LED.