TCAD Simulation Analysis on Gate Structure and Trap Effect of GaN-Based Junctionless FinFETs

In this paper, the superiority of the triple-gate structure, the junctionless structure, and the overlapped-gate structure is successively confirmed by comparative simulations using Silvaco TCAD. Analyze and deduce the correspondence between each simulation parameter and the performance of the device by comparing the transfer characteristics and the output characteristics and other parameters. The results show that the fin structure enables enhanced gate control; the junctionless FinFET has an advantage over conventional FinFETs due to its insensitivity to the trap effect; and the overlapped-gate can significantly suppress the trap effect. In the last part of the article, we simulate the key parameters of junctionless FinFETs, and we infer that they will be very promising in the future with the miniaturization trend, as they have more advantages at smaller sizes.