A Novel Silicon Carbide Insulated Gate Bipolar Transistor with Short Super Junction

A novel silicon carbide (SiC) insulated gate bipolar transistor with short super junction (SSJ-IGBT) is proposed in this article. The specific ON-resistance (RON,sp) of SSJ-IGBT is decreased by 10.87% compared with conventional IGBT (C-IGBT). Due to the fact that the high doping in the N-pillar causes the low resistance and improves the conductivity modulation. The P-well in the SSJ-IGBT is fully protected by the super junction. Thus, a reduced corner field below 2 MV/cm can be achieved in the OFF-state. Furthermore, due to the SSJ structure, the carriers can be drifted to the buffer layer more easily by the electric field in the depletion region. Therefore, a low turn-OFF loss (125.78 mJ/cm
²
) has been achieved for the SSJ-IGBT. These results show that SSJ-IGBT structure has great tradeoff between the ON-state and turn-OFF loss, indicating the potential for ultrahigh-voltage power electronic of the future.