Influence of Temperature on Dynamic and Static Parameters of 6.5kV Welding SiC MOSFET Module

The test of dynamic and static parameters are the necessary step for SiC MOSFET (Silicon Carbide Metal- Oxide-Field-Effect-Transistor) module to be verified after packaging. In this paper, the 6.5kV/100A welding SiC module is selected to test the dynamic and static parameters at room temperature and high temperature successively. The module is packaged by our team with two 6.5kV/50A SiC MOSFET and two 6.5kV/50A SiC SBD (Schottky Barrier Diode) based on 6-inch SiC wafer developed by our company. The influence of temperature on the static and dynamic parameters is analyzed by data extraction, calculating the rate of change and drawing the radar comparison diagram. Combined with the working principle of SiC MOSFET and SiC SBD chip inside the module, the main reason of the change of dynamic and static parameters caused by temperature is studied.