Heteroepitaxial MoS2 on Wide Bandgap Semiconductors: A Review

As a typical two-dimensional (2D) material, molybdenum disulfide (MoS
2
) can be used in micro-nano electronics, optoelectronics and flexible wearable devices due to its adjustable bandgap width, high electron mobility and excellent mechanical properties. Wide bandgap semiconductors (WBS) have the advantages of high breakdown voltage, electron mobility and thermal conductivity. Their good lattice matching makes WBS an excellent substrate material for MoS
2
. The performance of devices based on MoS
2
/WBS heterostructure is highly dependent on the quality of epitaxial MoS
2
. This review discusses the preparation methods of MoS
2
on silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga
2
O
3
) and diamond in recent years. In addition to the common exfoliation method and transfer method, people can now directly epitaxially grow high-quality MoS
2
films on WBS substrates through chemical vapor deposition (CVD), pulsed laser deposition (PLD), and sulfurization of metallic molybdenum (Mo) methods. Devices fabricated based on these methods such as photodetectors, tunnel diodes, and gas sensors are also discussed. Finally, the challenges and future directions of epitaxial MoS
2
on WBS are pointed out.