High Current Density and High Breakdown Voltage Enhancement-Mode Gate-Controlled Heterojunction Vertical β-Ga2O3 MOSFET

In this paper, a novel high-performance enhancement- mode (E-mode) gate-controlled heterojunction β-Ga
2
O
3
vertical power MOSFET (GCH-VMOS) has been proposed and investigated using Sentaurus TCAD simulation. At V
GS
= 0 V, both the p-type NiO and the metal–insulator– semiconductor (MIS) trench gate structure depletes the conduction channel to realize the E-mode. Furtherly, in the forward blocking state V
DS
> 0 V, the gate-controlled NiO/β- Ga
2
O
3
heterojunction is reverse biased and enhances the pinch- off effect to obtain a low leakage current and thus high breakdown voltage (BV). In the on-state V
GS
> 0 V, the NiO/β- Ga
2
O
3
heterojunction is forward biased, and the depletion region shrinks and the channel conduction area increases to achieve high current density. The simulated results showed a positive threshold voltage (V
TH
) of 0.6 V, a low specific on- resistance (R
on,sp
) of 4.26 mΩ·cm
²
, a high current density of 1.5 kA/cm
²
, a high BV of 2559 V (at V
GS
= 0 V) and power figure of merit (PFOM) up to 1.54 GW/cm
²
for the GCH-VMOS. The proposed E-mode device demonstrates great potential for the next generation of power electronics.