Fabrication and Study of Micro-LED Quantum Dot Color Conversion Layer Based on Inkjet Printing

In this study, red and green quantum dot color conversion layer was successfully fabricated using inkjet printing (IJP) technology on a blue micro-light-emitting diode (Micro-LED) backlight. To reduce the optical crosstalk between different sub-pixels, a black matrix (BM) layer with a thickness of 15 μm was proposed. Furthermore, to protect quantum dots (QDs), a SiO
2
passivation layer with a thickness of 3 nm was uniformly deposited on the entire pattern by Atomic Layer Deposition (ALD). Subsequently, a pixel array featuring a sub-pixel size of 37.5 μm and a line width of 2 μm was fabricated on the BM layer treated with Reactive Ion Etching (RIE), and the thickness of the QDCC layer was controlled by RIE. The external quantum efficiencies of the red and green QDCC layer were 12.9% and 18.2%, respectively, and the emission spectra had blue light being transmitted, accompanied by a slight redshift. This research addresses the gaps in display applications and holds promise for the future advancement of Micro-LED display technology.