A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence

This paper presents a datasheet-driven SPICE model and corresponding automated extraction process for Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). The proposed SPICE model introduces an equivalent circuit that capture the intrinsic physical mechanisms of the devices and each circuit element is described by non-segmented empirical formulas. A differential evolution (DE) algorithm is adopted for automated model parameters extraction. We have validated the model by comparing the simulation results with datasheets from two mainstream SiC MOSFET devices vendors. Results show that the RMS errors are less that 7% under different bias and temperatures. The model's convergence was further confirmed through simulation of a three-phase full-bridge inverter circuit.