Inversion-Mode InGaAs FinFETs for Logic and RF Applications

We present the DC and RF characterization of inversion-mode In
0.53
Ga
0.47
As FinFETs. Tri-gate fin devices on InP substrates have demonstrated a maximum g
m
=2.05 mS/µm and f
T
/f
max
=270/80 GHz at V
ds
=0.5 V, and drain induced barrier lowering (DIBL) of 110 (mV/V) was also exhibited. Moreover, a subthreshold swing (SS) of 81 and 92 (mV/dec) was obtained at V
ds
= 0.05 and 0.5 V, respectively. With the assistance of delay-time analysis, the effective electron velocity is also reported.