Selective Atomic Layer Deposition to Extend Moore’s Law and Beyond: Surface Kinetic Tuning for Self-Aligned Growth

Moore’s law drives the semiconductor industry to continuously shrink the critical size of transistors. As a bottom-up self-aligned patterned film deposition technique with atomic-level thickness control, area-selective atomic layer deposition (ASD) holds immense potential for applications in the realization of fully self-aligned vias (FSAV) manufacturing. In this work, we selected alumina film as the target deposition material, and exploited template-assisted methods for selective deposition on metal/dielectric surface. After investigated the kinetic growth curves of self-assembled monolayers (SAMs) prepared at different times and the thermal decomposition curves of SAMs at different temperatures, we explored the impact of various process parameters on the blocking ability of SAMs. Finally, through kinetic tuning, selectivity approaches nearly 99% on Cu/SiO
2
pattern after 5.5 nm of Al
2
O
3
atomic layer deposition (ALD).