Single event transient analysis of isolation problems for the high side devices in a 0.18μm BCD Process

This paper presents a radiation-induced single event transient current simulation in a modern smart power BCD technology, which is interest for space applications. Two kinds of N-type Buried Layer (NBL) architecture for isolation capabilities with high side operation under energetic particle incidence are comparative studied. The unwanted punch-through currents derive from the parasitic substrate PNP bipolar break the isolation, and the transient substrate current can induce severe disturbing in integrated circuit. The result show that the floating NBL isolation structure has worse single event effect, though it is a new isolation method for next generation smart power BCD techniques.