Total Ionizing Dose Hardness Analysis of Transistors in Radiation-Hardened 0.18μm BCD Technology

In this work, the TID radiation hardened technology was developed based on 0.18μm BCD process with ion implantation and material modification in STI. The tradeoffs between electrical performance and radiation tolerance were investigated to produce a balanced design capable of meeting both electrical and radiation performance goals. The electrical performance and radiation tolerance of 1.8V NMOS and 18V NLDMOS prepared by the radiation-hardened 0.18μm BCD process were studied. It was found that the RH process has no harmful effect on the electrical characteristics of the devices. The radiation performance of 1.8V NMOS and 18V NLDMOS were significantly improved.