The SEE Hardening Technologies for 16 nm FinFET

In order to improve the reliability of electronic devices under irradiation environment, the Silvaco TCAD is employed for modeling and simulation of 16 nm FinFET to study the single event effects(SEE) hardening technologies. By inserting electrodes into both sides of the FinFET device to induce an electric field, the ion-induced electron-hole pairs drift out of the sensitive area, thus reducing the collected charge and achieving the purpose of radiation resistance. The effects of trench electrodes parameters on SEE are also studied.