TSiCV Based Silicon Carbide Interposer Technology

This paper describes the research on the development on SiC Interposer technology with Through SiC Vias (TSiCV). It demonstrates a SiC Interposer with the Flip-Chip assembled Chips with different thicknesses. It gives an overview over the different approaches of via formation and describes the fabrication of a SiC Interposer. It highlights the differences between the via formation between silicon and silicon carbide. The etching of SiC itself is described and two different isolation methods for the vias are discussed. Furthermore, two different methods to access the backside of the via are presented. The via diameters between 40 μm to 120 μm have been investigated and etch rates of up to 2 μm/min were achieved. A discussion about the possibilities and limitation of the different approaches are presented.