Effect of Snubber on Switching Times of SiC MOSFET based 4-quadrant Switch

SiC MOSFETs have very short switching times, block high voltage, have high junction temperature withstanding range, and have low switching and conduction losses. An application of SiC MOSFETs is single-stage solid-state transformers (SSTs). The bidirectional or 4-quadrant switches are the building blocks of matrix converter-based single-stage SSTs. The conducting and blocking devices change according to the quadrant, and switching involves two devices for the SiC MOSFET based 4quadrant switch. Therefore, the operation of the SiC MOSFET based 4-quadrant switch differs from the SiC MOSFET as a 2-quadrant switch. The snubbers that reduce the high voltage spikes and switching oscillations in SiC MOSFETs are also used in SiC MOSFET based 4-quadrant switches. The literature discusses the effect of snubbers on switching oscillations and switching times of SiC MOSFETs and SiC diodes. However, the effect of snubbers on the switching times of SiC MOSFET based 4-quadrant switch in all quadrants is missing in the literature. Therefore, this paper theoretically and experimentally shows the effect of snubbers on the switching times of SiC MOSFET based 4-quadrant switches.