Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs While Utilizing Room Temperature Ion Implantations

Several 1.2kV-rated 4H-SiC MOSFETs were fabricated with various edge termination (ET) structures to investigate the effects of both Junction Termination Extension (JTE) based and P+ ring-based ETs, which were implanted at room temperature (RT). The study revealed that JTE-based ETs exhibited reduced generation of Basal Plane Dislocations (BPD) and consequently suppressed leakage currents when the P+ dose exceeded the previously established RT critical aluminum dose of 1x10
¹⁵
cm
^-2
. In contrast, the P+ ring-based termination structures led to elevated leakage currents, even in the absence of BPDs within RT-implanted devices. Consequently, when producing devices using RT ion implantation, JTE-based ETs proved to be the ideal choice.