Scalable Test System for Long Term Reliability Assessment of SiC MOSFET Stability in Extreme dV/dt Stress Conditions

A scalable test system was developed to evaluate the stability of SiC MOSFETs operating in a continuous mode at extreme dV/dt conditions. The half-bridge test system can test multiple devices simultaneously with minimal power consumption and thus easily expandable to quickly generate the required device characterization statistics to ensure accurate conclusions. Several SiC MOSFETs with different rated voltages and oxide thickness were evaluated for potential degradation when subjected to both reverse-recovery and forward hard switched stress of 10V/ns and 150V/ns over 1500+ hours at elevated temperature with less than 4% parameter shifts.